| PART |
Description |
Maker |
| VUB145 VUB145-16NO1 VUB116 VUB116-16NO1 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 95 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| FS15R12VT3 |
IGBT-modules
IGBT Modules up to 1200V SixPACK; Package: AG-EASY750-1; IC (max): 15.0 A; VCE(sat) (typ): 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EasyPACK 750;
|
eupec GmbH
Infineon Technologies
|
| VID75-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| 2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
| SKM195GB063DN SKM195GAL063DN SKM195GAR063DN |
Superfast NPT-IGBT Modules 250 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX151GAR12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| SEMIX151GB12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| SEMIX503GB126HDS |
Trench IGBT Modules 480 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| MDI100-12A3 MII100-12A3 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
IXYS Corporation
ETC[ETC]
|
